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| Hyper SIDELED(R) Hyper-Bright LED LS A676, LA A676, LO A676 LY A676 Besondere Merkmale q q q q q Gehausefarbe: wei als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung fur alle SMT-Bestuck- und Reflow-Lottechniken geeignet gegurtet (12-mm-Filmgurt) q q q q q color of package: white for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assebly and reflow-soldering methods available taped on reel (12 mm tape) Semiconductor Group 1 1998-11-12 VPL06880 Features LS A676, LA A676, LO A676 LY A676 Typ Emissionsfarbe Color of Emission Type Farbe der Lichtaustrittsflache Color of the Light Emitting Area colorless clear Lichtstarke Lichtstrom Bestellnummer Luminous Intensity IF = 20 mA IV (mcd) 25 40 63 100 40 40 63 100 160 63 40 63 100 160 63 40 63 100 160 63 ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... 200 80 125 200 320 320 125 200 320 500 320 125 200 320 500 200 125 200 320 500 Luminous Flux IF = 20 mA V (mlm) 180 (typ.) 300 (typ.) 450 (typ.) 300 (typ.) 450 (typ.) 700 (typ.) 300 (typ.) 450 (typ.) 700 (typ.) 300 (typ.) 450 (typ.) 700 (typ.) - Ordering Code LS A676-NR LS A676-P LS A676-Q LS A676-R LS A676-PS LA A676-PS LA A676-Q LA A676-R LA A676-S LA A676-QT LO A676-PS LO A676-Q LO A676-R LO A676-S LO A676-QT LY A676-PS LY A676-Q LY A676-R LY A676-S LY A676-QT super-red Q62703-Q3242 Q62703-Q3243 Q62703-Q3244 Q62703-Q3245 Q62703-Q3246 Q62703-Q3500 Q62703-Q3501 Q62703-Q3502 Q62703-Q3503 Q62703-Q3504 Q62703-Q3119 Q62703-Q3120 Q62703-Q3121 Q62703-Q3122 Q62703-Q3118 Q62703-Q3251 Q62703-Q3252 Q62703-Q3253 Q62703-Q3254 Q62703-Q3255 amber colorless clear orange colorless clear yellow colorless clear Streuung der Lichtstarke in einer Verpackungseinheit I V max / I V min 2.0. Luminous intensity ratio in one packaging unit I V max / I V min 2.0. Semiconductor Group 2 1998-11-12 LS A676, LA A676, LO A676 LY A676 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspanung1) Reverse voltage1) Verlustleistung Power dissipation Warmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board*) (Padgroe 16 mm2) mounted on PC board*) (pad size 16 mm2) 1) 1) 2) Symbol Symbol Werte Values LS, LO, LA LY - 55 ... + 100 - 55 ... + 100 + 100 30 20 to be defined Einheit Unit C C C mA A Top Tstg Tj IF IFM VR Ptot Rth JA 5302) 3 80 500 V mW K/W Belastung in Sperrichtung sollte vermieden werden. Reverse biasing should be avoided. vorlaufig/preliminary *) PC-board: FR4 Semiconductor Group 3 1998-11-12 LS A676, LA A676, LO A676 LY A676 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 20 mA Dominantwellenlange Dominant wavelength IF = 20 mA Spektrale Bandbreite bei 50% Irel max Spectral bandwidth at 50% Irel max IF = 20 mA Abstrahlwinkel bei 50% Iv (Vollwinkel) Viewing angle at 50% Iv Durchlaspannung Forward voltage IF = 20 mA Sperrstrom Reverse current VR = 3 V Symbol Symbol LS (typ.) peak (typ.) (typ.) dom (typ.) (typ.) (typ.) 2 (typ.) VF (max.) VF (typ.) IR (max.) IR TC TC (typ.) (typ.) - 1.95 - 1.78 - 1.67 - 2.51 mV/K 645 LA 622 Werte Values LO 610 LY 591 nm Einheit Unit 632 615 605 587 nm 16 16 16 15 nm 120 2.0 2.6 0.01 10 120 2.0 2.6 0.01 10 120 2.0 2.6 0.01 10 120 2.0 2.6 0.01 10 Grad deg. V V A A Temperaturkoeffizient von dom (IF = 20 mA) Temperature coefficient of dom (IF = 20 mA) Temperaturkoeffizient von peak, IF = 20 mA Temperature coefficient of peak, IF = 20 mA 0.014 0.062 0.067 0.096 nm/K 0.14 0.13 0.13 0.13 nm/K Temperaturkoeffizient von VF, IF = 20 mA (typ.) TCV Temperature coefficient of VF, IF = 20 mA (typ.) Semiconductor Group 4 1998-11-12 LS A676, LA A676, LO A676 LY A676 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 10 mA Relative spectral emission V() =spektrale Augenempfindlichkeit Standard eye response curve 100 rel % 80 OHL00235 V 60 yellow orange amber super-red 40 20 0 400 450 500 550 600 650 nm 700 Abstrahlcharakteristik Irel = f () Radiation characteristic 40 30 20 10 0 OHL01660 1.0 50 0.8 0.6 60 0.4 70 0.2 80 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 0 Semiconductor Group 5 1998-11-12 LS A676, LA A676, LO A676 LY A676 Durchlastrom IF = f (VF) Forward current TA = 25 C 10 2 mA F 5 OHL00232 Relative Lichtstarke IV/IV(20 mA) = f (IF) Relative luminous intensity TA = 25 C V 10 1 OHL00233 V (20 mA) 10 0 10 1 5 5 10 -1 5 10 0 5 10 -2 5 superred yellow orange/amber 10 -1 1.0 1.4 1.8 2.2 2.6 3.0 V 3.4 VF 10 -3 -1 10 5 10 0 5 10 1 F mA 10 2 Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA) 35 OHL00248 Relative Lichtstarke IV / IV(25 C ) = f (TA) Relative luminous intensity IF = 10 mA V 2.0 OHL00238 F mA 30 25 yellow 20 15 10 V (25 C) 1.6 1.2 orange yellow amber super-red 0.8 orange yellow amber super-red 0.4 5 0 0 -20 0 20 40 60 80 C 100 TA 0 20 40 60 C TA 100 Semiconductor Group 6 1998-11-12 LS A676, LA A676, LO A676 LY A676 Zulassige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability LS, LA, LO Duty cycle D = parameter, TA = 25 C 10 1 A F 5 OHL00321 Zulassige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability LY Duty cycle D = parameter, TA = 25 C tp tp D= T F T D= 0.005 0.01 0.02 0.05 0.1 10 5 0 0.2 10 -1 5 0.5 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2 tp Semiconductor Group 7 1998-11-12 LS A676, LA A676, LO A676 LY A676 Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) (2.4) 2.8 2.4 4.2 3.8 0.7 Cathode Cathode marking 2.54 spacing (1.4) 1.1 0.9 Anode (0.3) (2.85) (2.9) (R1) 3.8 3.4 4.2 3.8 Kathodenkennung: Cathode mark: abgeschragte Ecke bevelled edge Semiconductor Group 8 1998-11-12 GPL06880 |
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